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www.irf.com 1 4/22/09 IRLB8721pbf hexfet power mosfet notes through are on page 9 gds gate drain source 97390 to-220ab IRLB8721pbf s d g d applications benefits very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current lead-free optimized for ups/inverter applications high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use v dss r ds(on) max qg (typ.) 30v 8.7m @v gs = 10v 7.6nc absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case CCC 2.3 r cs case-to-sink, flat greased surface 0.5 CCC r ja junction-to-ambient CCC 62 v c c/w w a 0.43 33 10lb in (1.1n m) -55 to + 175 300 (1.6mm from case) 65 max. 62 250 20 3044 downloaded from: http:///

2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / t j breakdown voltage temp. coefficient CCC 21 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 6.5 8.7 m CCC 13.1 16 v gs(th) gate threshold voltage 1.35 1.80 2.35 v v gs(th) / t j gate threshold voltage coefficient CCC -7.0 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 35 CCC CCC s q g total gate charge CCC 7.6 13 q gs1 pre-vth gate-to-source charge CCC 1.9 CCC q gs2 post-vth gate-to-source charge CCC 1.2 CCC nc q gd gate-to-drain charge CCC 3.4 CCC q godr gate charge overdrive CCC 2.0 CCC see fig. 16 q sw switch charge (q gs2 + q gd ) CCC 4.6 CCC q oss output charge CCC 7.9 CCC nc r g gate resistance CCC 2.3 3.8 t d(on) turn-on delay time CCC 9.1 CCC t r rise time CCC 93 CCC t d(off) turn-off delay time CCC 9.0 CCC ns t f fall time CCC 17 CCC c iss input capacitance CCC 1077 CCC c oss output capacitance CCC 360 CCC pf c rss reverse transfer capacitance CCC 110 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 62 (body diode) a i sm pulsed source current CCC CCC 250 (body diode) v sd diode forward voltage CCC CCC 1.0 v t rr reverse recovery time CCC 16 24 ns q rr reverse recovery charge CCC 14 21 nc typ. CCC CCC i d = 25a v gs = 0v v ds = 15v r g = 1.8 max. 9825 t j = 25c, i f = 25a, v dd = 15v di/dt = 200a/ s t j = 25c, i s = 25a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 15v, i d = 25a v ds = 15v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 25a v ds = 15v conditions see fig. 14 v gs = 4.5v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 31a ? = 1.0mhz v gs = 4.5v, i d = 25a v gs = 20v v gs = -20v v ds = v gs , i d = 25 a v ds = 24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 3.0v vgs top 10v 9.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 3.0v vgs top 10v 9.0v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.0 2.0 4.0 6.0 8.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 10v downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 4 8 1216202428 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 25a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t c = 25c t j = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec downloaded from: http:///

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 175 t c , casetemperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0ma i d = 250 a i d = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.003454 13.68748 0.17246 7.21e-05 0.786312 0.001227 1.368218 0.007178 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 downloaded from: http:///

6 www.irf.com fig 13c. unclamped inductive waveforms fig 13b. unclamped inductive test circuit t p v (br)dss i as fig 13a. maximum avalanche energy vs. drain current r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs v ds 90%10% v gs t d(on) t r t d(off) t f fig 14b. switching time waveforms fig 12. on-resistance vs. gate voltage
1 0.1 % + - fig 14a. switching time test circuit 2 4 6 8 10 v gs, gate -to -source voltage (v) 4 8 12 16 20 24 28 32 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 31a t j = 25c t j = 125c 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.4a 10a bottom 25a downloaded from: http:///

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 16a. gate charge test circuit fig 15.

for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr downloaded from: http:///

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to-220ab packages are not recommended for surface mount application. note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ downloaded from: http:///

www.irf.com 9 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.32 mh, r g = 25 , i as = 25a. pulse width 400 s; duty cycle 2%.
when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. * ! data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2009
international part number rectifier lot code as s e mb l y logo ye ar 0 = 2000 dat e code we e k 19 line c lot code 1789 e xample: t his is an irf 1010 note: "p" in assembly line position i ndi cates "l ead - f r ee" in t he assembly line "c" as s e mb led on ww 19, 2000 note: for the most current drawing please refer to ir website at: http://www .irf.com/package/ downloaded from: http:///

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